Micron Technology DRAM SDRAM, Part #: MT41K1G8RKB-107:P TR | Dynamic random access memory | DEX Model Y 35V center-terminated push/pull I/O •

35V center-terminated push/pull I/O • JEDEC-standard ball-out • Low-profile package • TC of 0°C to 95°C – 0°C to 85°C: 8192 refresh cycles in 64ms – 85°C to 95°C: 8192 refresh cycles in 32ms – Industrial temperature (IT) available

only a single external averaging capacitor is required

Part #: IMZA65R072M1HXKSA1

Core Size: 8-Bit

These modules are specifically designed to improve efficiency of PFC and output rectification stages of EV / HEV battery charging stations

Micron Technology DRAM SDRAM, Part #: MT41K1G8RKB-107:P TR | Dynamic random access memory | DEX Model Y 35V center-terminated push/pull I/O •Micron Technology DRAM SDRAM DDR3L, Part #: MT41K1G8RKB 107: P TR uses Microns 4Gb DDR3L SDRAM die (essentially two ranks of the 4Gb DDR3L SDRAM). Features: Uses 4Gb Micron die Two ranks (includes dual CS#, ODT, CKE, and ZQ balls) Each rank has eight internal banks for concurrent operation VDD = VDDQ = 1. 35V (1. 2831. 45V); backward compatible to VDD = VDDQ = 1. 5V 0. 075V 1. 35V center terminated push pull I O JEDEC standard ball out Low profile